Publications

Journal Publications

• D Sharda Devi, Tarun Agarwal, and Nihar R Mohapatra, “Stress-Modulated Defect Engineering in Monolayer WS2: A First-Principles Study”, IEEE-JEDS, 2026 (Accepted)
• D Sharda Devi and Nihar R Mohapatra, “Exploring p-Type Contact for Monolayer WS2 FETs Using Halogen Doping and Intermediate Layers”, ACS Omega, 2024 Link
• D Sharda Devi and Nihar R Mohapatra, “Defect-Topology-Driven Halogen Doping and Fermi-Level Depinning in WS2–Au Contacts” (Under review)
• Krishnendu Mukhopadhyay, Pranavram Venkatram, Mozhdeh Mirakhory, Mengyi Wang, Michael Curtis, D Sharda Devi, et al., “Integration of high-κ gate dielectrics with 2D semiconductors via self-oxidizing vdW metal seed layers” (Under review)

Conference Publications

• D Sharda Devi, Tarun Agarwal, and Nihar R. Mohapatra, “Stress–Dopant Interplay in Halogen-Modified WS2 Monolayers: Insights from First-Principles”, ICEE 2025 Link
• Santhia Carmel A, D Sharda Devi, Nihar R. Mohapatra, “Reduction of Schottky Barrier Height for Au-WS$_2$ Interface with Iodine Doping - A Physical Insight”, IEEE NANO 2023 Link

Presentations

• D Sharda Devi and Nihar R Mohapatra, “Contact Engineering in Monolayer WS2 Transistor: Halogen Doping and Interlayer Strategies for Schottky Barrier Reduction”, International Conference on Semiconductor Chip Design and Manufacturing (SCDM-2025) [Best Presentation Award]

• D Sharda Devi and Nihar R Mohapatra, “Reduction of Schottky barrier height using substitutional doping in WS2”, Student Research Forum, EDTM 2024